Scientific News

An ideal ferroelectric (FE) must be an insulator to show a spontaneous polarization, however, recent theoretical and some experimental work suggests that a ferroelectric state can exist up to a certain critical doping level. Thus the possibility of coexistence of ferroelectricity and d electron occu...

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Ferroelectric memory devices could be an alternative to magnetic based memories for future high-density data storage. Such devices have considerable advantages: they are non-volatile, have fast read-write times, low energy consumption and use realistic voltages. However, before considering future ap...

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